FDB0165N807L - onsemi

FDB0165N807L Details

• Manufacturer Part Number:

  FDB0165N807L

• Brand Name:

  onsemi

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Part Package Code:

  D2PAK-7 / TO-263-7

• Package Description:

  D2PAK-7/6

• Manufacturer Package Code:

  418AY

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• Manufacturer:

  onsemi

• YTEOL:

  5.9

• Avalanche Energy Rating (Eas):

  1083 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  80 V

• Drain Current-Max (ID):

  310 A

• Drain-source On Resistance-Max:

  0.0016 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  1050 pF

• JEDEC-95 Code:

  TO-263CB

• JESD-30 Code:

  R-PSSO-G6

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  6

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  245

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  300 W

• Pulsed Drain Current-Max (IDM):

  1780 A

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn) - annealed

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  299 ns

• Turn-on Time-Max (ton):

  275 ns