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FDB0170N607L - onsemi

Description: High Power and Current Handling Capability ; RoHS Compliant ; High Performance Trench Technology for Extremely Low RDS(on) ; Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 39 A ; Low Gate Charge ; Fast Switching Speed

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FDB0170N607L - onsemi PCB footprint - Other - Other - FDB0170N607L-3
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FDB0170N607L Details

  • Manufacturer Part Number:

    FDB0170N607L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-7 / TO-263-7

  • Package Description:

    D2PAK-7/6

  • Manufacturer Package Code:

    418AY

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    1109 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.0014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    340 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    1620 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    193 ns

  • Turn-on Time-Max (ton):

    200 ns

FDB0170N607L Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduces thermal resistance.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance. Also, ensure good airflow and avoid thermal hotspots.
  • The maximum allowed voltage on the gate pin is ±20V. Exceeding this voltage may damage the device.
  • Use ESD protection devices such as TVS diodes or ESD suppressors on the input and output pins. Handle the device by the body or use an anti-static wrist strap to prevent ESD damage.
  • A gate drive voltage of 10-15V is recommended for optimal switching performance. This ensures fast switching times and minimizes power losses.

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FDB0170N607L Overview

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