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FDB024N04AL7 - onsemi

Description: Fast Switching Speed; RoHS Compliant; High Performance Trench Technology for Extremely Low RDS(on); Low Gate Charge, QG = 84nC ( Typ.); High Power and Current Handling Capability; RDS(on) = 2.0mΩ ( Typ.)@ VGS = 10V, ID = 80A

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FDB024N04AL7 - onsemi PCB footprint - Other - Other - FDB024N04AL7-1
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FDB024N04AL7 Details

  • Manufacturer Part Number:

    FDB024N04AL7

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK-7 / TO-263-7

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418AY

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    864 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    214 W

  • Pulsed Drain Current-Max (IDM):

    876 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB024N04AL7 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) that the FDB024N04AL7 can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure the FDB024N04AL7 is properly biased, follow the recommended biasing conditions outlined in the datasheet, including the gate-source voltage (Vgs) and drain-source voltage (Vds) ratings. Additionally, ensure the device is operated within the recommended operating conditions, such as temperature and current limits.
  • For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity, such as using thermal vias and a copper pour on the PCB. Additionally, ensure the device is mounted on a heat sink or thermal pad to dissipate heat efficiently. Consult the datasheet and application notes for more detailed guidance on PCB layout and thermal management.
  • Yes, the FDB024N04AL7 is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, ensure that the device is operated within the recommended frequency range and that the PCB layout is optimized for high-frequency operation to minimize parasitic inductance and capacitance.
  • To protect the FDB024N04AL7 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes, in the circuit design.

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FDB024N04AL7 Overview

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