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FDB024N08BL7 - onsemi

Description: N-Channel 80 V 120A (Tc) 246W (Tc) Surface Mount TO-263-7

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PCB Footprints
FDB024N08BL7 - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263 7 LD) CASE 418AY ISSUE C_2025
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3D Models
FDB024N08BL7 - onsemi  - 3D model - Other - D2PAK7 (TO−263 7 LD) CASE 418AY ISSUE C_2025
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FDB024N08BL7 Details

  • Manufacturer Part Number:

    FDB024N08BL7

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-7 / TO-263-7

  • Package Description:

    D2PAK-7/6

  • Manufacturer Package Code:

    418AY

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    917 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    246 W

  • Pulsed Drain Current-Max (IDM):

    916 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB024N08BL7 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FDB024N08BL7 is 150°C. Exceeding this temperature can lead to device failure.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 10°C/W or lower, and ensuring good airflow around the device. Additionally, the PCB design should allow for good thermal conduction and radiation.
  • The recommended gate drive voltage for the FDB024N08BL7 is between 10V and 15V. This ensures proper switching and minimizes power losses.
  • Yes, the FDB024N08BL7 is suitable for high-frequency switching applications up to 100 kHz. However, the user should ensure that the device is properly cooled and the PCB design is optimized for high-frequency operation.
  • To protect the FDB024N08BL7 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and a current sense resistor or a fuse to detect and respond to overcurrent conditions.

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FDB024N08BL7 Overview

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