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FDB0250N807L - onsemi

Description: Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 30 A ; Max rDS(on) = 2.7 mΩ at VGS = 8 V, ID = 27 A ; RoHS Compliant ; High Performance Trench Technology for Extremely Low RDS(on) ; Low Gate Charge ; Fast Switching Speed ; High Power and Current Handling Capability

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PCB Footprints
FDB0250N807L - onsemi PCB footprint - Other - Other - FDB0250N807L-2
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FDB0250N807L Details

  • Manufacturer Part Number:

    FDB0250N807L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-7 / TO-263-7

  • Package Description:

    D2PAK-7/6

  • Manufacturer Package Code:

    418AY

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    633 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.0022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    165 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    214 W

  • Pulsed Drain Current-Max (IDM):

    1110 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    189 ns

  • Turn-on Time-Max (ton):

    174 ns

FDB0250N807L Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet, and use a stable voltage source with minimal ripple. Also, ensure that the input and output capacitors are properly selected and placed close to the device.
  • The maximum allowed junction temperature for the FDB0250N807L is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • Yes, the FDB0250N807L is suitable for high-reliability applications. It is designed and manufactured to meet the requirements of AEC-Q101, which ensures its reliability and performance in harsh environments.
  • To handle ESD protection for the FDB0250N807L, follow proper handling and storage procedures, and use ESD-protective packaging and materials. Additionally, consider adding ESD protection devices, such as TVS diodes, to the PCB design.

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FDB0250N807L Overview

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