Part Image

FDB035AN06A0 - onsemi

Description: Low Qrr Body Diode; UIS Capability (Single Pulse and Repetitive Pulse); Qualified to AEC Q101; Low Miller Charge; QG(tot) = 95nC (Typ.) @ VGS = 10V; RDS(on) = 3.2mΩ (Typ.) @ VGS = 10V, ID = 80A

Download FDB035AN06A0 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDB035AN06A0 - onsemi PCB footprint - Other - Other - TO-263 2L (D2PAK)_2023-1
click to zoom
3D Models
FDB035AN06A0 - onsemi  - 3D model - Other - TO-263 2L (D2PAK)_2023-1
click to zoom

FDB035AN06A0 Details

  • Manufacturer Part Number:

    FDB035AN06A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    TO-263AB, 3/2 PIN

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    625 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    367 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    75 ns

  • Turn-on Time-Max (ton):

    163 ns

FDB035AN06A0 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDB035AN06A0 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4V and 10V, and the drain-source voltage (Vds) should be between 10V and 30V. Additionally, the device should be operated within the recommended operating area to prevent overheating.
  • The maximum power dissipation of the FDB035AN06A0 is 1.5W, and it is recommended to keep the junction temperature (Tj) below 150°C to ensure reliable operation.
  • To protect the FDB035AN06A0 from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-sensitive handling procedures. Additionally, the device should be stored in an anti-static bag or container when not in use.
  • The recommended PCB layout for the FDB035AN06A0 includes using a ground plane, minimizing trace lengths and widths, and using a thermal relief pattern to improve heat dissipation. It is also recommended to use a low-ESR capacitor for decoupling.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDB035AN06A0 Overview

Use the download button to access the FDB035AN06A0 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDB03, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDB035AN06A0

Showing 0 results

FDB035AN06A0 Alternates

Showing results

Image Part Number Model
Part Image FDB035AN06A0_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 22A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB