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FDB070AN06A0 - onsemi

Description: RDS(on) = 6.1mΩ (Typ.) @ VGS = 10V, ID = 80A; Low Miller Charge; UIS Capability (Single Pulse and Repetitive Pulse); Low Qrr Body Diode; QG(tot) = 51nC (Typ.) @ VGS = 10V

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FDB070AN06A0 Details

  • Manufacturer Part Number:

    FDB070AN06A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    TO-263AB, 3/2 PIN

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    190 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    175 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB070AN06A0 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FDB070AN06A0 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The recommended thermal resistance (RθJA) is ≤ 2°C/W. Additionally, ensure good airflow around the device.
  • The recommended gate drive voltage for the FDB070AN06A0 is between 10V and 15V. This ensures proper switching and minimizes power losses.
  • Yes, the FDB070AN06A0 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • To protect the FDB070AN06A0 from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuit. Additionally, consider using a TVS (transient voltage suppressor) diode to protect against voltage spikes.

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FDB070AN06A0 Overview

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