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FDB088N08 - onsemi

Description: RDS(on) = 7.3mΩ ( Typ.)@ VGS = 10V, ID = 85A; High power and current handling capability; High performance trench technology for low RDS(on); Fast switching speed; Low Gate Charge; RoHS compliant

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FDB088N08 Overview

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FDB088N08 Alternates

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Image	Part Number	Model
	IRFS3607TRR Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	IRFS3607TRL Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	IRFS3607 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	IRFS3607PBF Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	AUIRFS3607 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
For a full list of alternate parts for FDB088N08, check out Findchips.com