Part Image

FDB15N50 - onsemi

Description: Reduced RDS(on) ( 330mΩ ( Typ.)@ VGS = 10V, ID = 7.5A); 175oC rated junction temperature; Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 16pF); Low gate charge Qg results in simple drive requirement ( Typ. 33nC); Improved Gate, avalanche and high reapplied dv/dt ruggedness; Improved switching speed with low EMI

Download FDB15N50 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDB15N50 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
click to zoom
3D Models
FDB15N50 - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
click to zoom

FDB15N50 Details

  • Manufacturer Part Number:

    FDB15N50

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    TO-263AB, 3 PIN

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    760 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB15N50 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FDB15N50 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and that the junction temperature remains below 150°C.
  • To ensure proper biasing, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings in the datasheet. Additionally, ensure that the gate drive circuitry is capable of providing a sufficient voltage and current to fully enhance the device. A gate resistor (Rg) value between 1-10 ohms is typically recommended.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and the heat sink. A heat sink with a thermal resistance of 1-2°C/W is recommended. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances.
  • To protect the FDB15N50 from ESD, follow proper handling and storage procedures. Use an anti-static wrist strap or mat when handling the device. Ensure that the PCB and components are properly grounded, and use ESD-sensitive device handling procedures during assembly and testing.
  • A typical gate drive circuit consists of a gate driver IC, a gate resistor (Rg), and a bootstrap capacitor (Cb). For protection, consider adding a gate-source zener diode (Dgs) and a drain-source zener diode (Dds) to prevent overvoltage and overcurrent conditions. A thermistor or thermal sensor can be used to monitor the device temperature.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDB15N50 Overview

Use the download button to access the FDB15N50 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDB15, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDB15N50

Showing 0 results