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FDB1D7N10CL7 - onsemi

Description: Low Qrr; Soft recovery body diode; Low RDS(on); Small Footprint (5 x 6 mm); RoHS compliant

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PCB Footprints
FDB1D7N10CL7 - onsemi PCB footprint - Other - Other - D2−PAK−7L
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FDB1D7N10CL7 - onsemi  - 3D model - Other - D2−PAK−7L
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FDB1D7N10CL7 Details

  • Manufacturer Part Number:

    FDB1D7N10CL7

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-7 / TO-263-7

  • Package Description:

    D2PAK-7/6

  • Manufacturer Package Code:

    418AY

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    595 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    268 A

  • Drain-source On Resistance-Max:

    0.00175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    80 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    1390 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    194 ns

  • Turn-on Time-Max (ton):

    116 ns

FDB1D7N10CL7 Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal relief pattern on the bottom layer and a solid ground plane on the top layer is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.
  • A gate drive voltage of 10-15V is recommended for optimal switching performance. This ensures that the device is fully enhanced and minimizes switching losses.
  • Use a TVS diode or a zener diode to clamp overvoltages. Implement overcurrent protection using a fuse or a current sense resistor with a comparator. Also, consider using a gate driver with built-in overcurrent protection.
  • A dead time of 100-200 ns is recommended to minimize shoot-through current. This ensures that the high-side and low-side devices are not conducting simultaneously, reducing losses and EMI.

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FDB1D7N10CL7 Overview

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