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FDB20N50F - onsemi

Description: RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 10 A; Qualified according to JEDEC Standards JESD22-A113F andIPC/JEDEC J-STD-020D.1; Low Crss (Typ. 27 pF); RoHS Compliant; 100% Avalanche Tested; Improve dv/dt Capability; Low Gate Charge (Typ. 50 nC)

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FDB20N50F - onsemi - PCB symbol
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FDB20N50F - onsemi PCB footprint - Other - Other - FDB20N50F-3
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3D Models
FDB20N50F - onsemi - 3D model - Other - FDB20N50F-3
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FDB20N50F Details

  • Manufacturer Part Number:

    FDB20N50F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB20N50F Frequently Asked Questions (FAQs)

  • The recommended PCB layout for the FDB20N50F is to keep the power and ground planes separate, with a minimum of 10mm clearance between them. Additionally, use a 10nF capacitor in parallel with the gate-source capacitance to reduce EMI and switching noise.
  • The FDB20N50F is designed for high-frequency applications and can operate up to 1MHz. However, it's recommended to derate the device for high-frequency applications to ensure reliable operation. Consult the application note for more information.
  • For high-power applications, it's recommended to use a heat sink with a thermal resistance of 2°C/W or lower. Additionally, ensure good airflow around the device and consider using a thermal interface material to improve heat transfer.
  • The FDB20N50F is designed to withstand high-voltage transients, but it's recommended to use a transient voltage suppressor (TVS) diode in parallel with the device to provide additional protection against high-voltage transients.
  • The FDB20N50F is designed to operate in high-temperature environments, with a maximum operating temperature of 150°C. However, it's recommended to derate the device for high-temperature applications and ensure good thermal management to prevent overheating.

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FDB20N50F Overview

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