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FDB2532 - onsemi

Description: N-Channel 150 V 8A (Ta), 79A (Tc) 310W (Tc) Surface Mount TO-263 (D2PAK)

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FDB2532 Details

  • Manufacturer Part Number:

    FDB2532

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    TO-263AB, 3/2 PIN

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB2532 Frequently Asked Questions (FAQs)

  • The FDB2532 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the VEE pin to a stable -5V power supply. Also, ensure the input voltage (VIN) is within the recommended range of 2.5V to 5.5V.
  • To minimize noise and EMI, use a multi-layer PCB with a solid ground plane, keep the input and output traces short and away from each other, and use a common-mode choke or ferrite bead on the input lines.
  • The FDB2532 can deliver up to 250mA of output current. Ensure the output current is within the recommended range, and use a heat sink if the device is expected to dissipate more than 1W of power.
  • Use X7R or X5R ceramic capacitors with a value of 1uF to 10uF for the input and output capacitors. The capacitor values may need to be adjusted based on the specific application and operating frequency.

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FDB2532 Overview

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Part Image FDB2532 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB