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FDB28N30TM - onsemi

Description: Low gate charge ( Typ. 39nC); RoHS compliant; Low Crss ( Typ. 35pF); RDS(on) = 108mΩ ( Typ.)@ VGS = 10V, ID = 14A; 100% avalanche tested

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FDB28N30TM - onsemi PCB footprint - Other - Other - FDB28N30TM-1
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FDB28N30TM Details

  • Manufacturer Part Number:

    FDB28N30TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    588 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.129 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB28N30TM Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDB28N30TM is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 30V. Additionally, a gate resistor (Rg) should be used to limit the gate current.
  • The maximum power dissipation of the FDB28N30TM is 120W, but this can be increased with proper heat sinking and thermal management.
  • To protect the FDB28N30TM from overvoltage and overcurrent, use a voltage regulator to limit the drain-source voltage (Vds) and a current sense resistor to monitor the drain current (Id). Additionally, consider using a protection circuit with a zener diode and a current-limiting resistor.
  • For optimal performance, use a 2-layer or 4-layer PCB with a solid ground plane and a separate power plane. Keep the gate and source pins as close as possible to minimize parasitic inductance. Use a Kelvin connection for the source pin to reduce voltage drops.

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FDB28N30TM Overview

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