Part Image

FDB44N25TM - onsemi

Description: Low Crss ( Typ. 60pF); RDS(on) = 69mΩ ( Max.)@ VGS = 10V, ID = 22A; Low gate charge ( Typ. 47nC); 100% avalanche tested

Download FDB44N25TM Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDB44N25TM - onsemi PCB footprint - Other - Other - FDB44N25TM-1
click to zoom
3D Models
FDB44N25TM - onsemi  - 3D model - Other - FDB44N25TM-1
click to zoom

FDB44N25TM Details

  • Manufacturer Part Number:

    FDB44N25TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    2055 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.069 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    307 W

  • Pulsed Drain Current-Max (IDM):

    176 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    420 ns

  • Turn-on Time-Max (ton):

    930 ns

FDB44N25TM Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FDB44N25TM is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and a capacitor (e.g., 100 nF) in parallel. This helps to reduce oscillations and ensures stable operation.
  • To minimize EMI, use a multi-layer PCB with a solid ground plane, keep the drain and source pins as close as possible, and use a Kelvin connection for the source pin. Additionally, use a common-mode choke or ferrite bead to filter the drain voltage.
  • Yes, the FDB44N25TM is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout and component selection are optimized for high-frequency operation to minimize losses and EMI.
  • Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current. You can also use a dedicated overcurrent protection IC for more advanced protection.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDB44N25TM Overview

Use the download button to access the FDB44N25TM schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDB44, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDB44N25TM

Showing 0 results