Part Image

FDB86363-F085 - onsemi

Description: Low QG and Compliance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant; Low RDS (ON)

Download FDB86363-F085 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDB86363-F085 - onsemi PCB footprint - Other - Other - FDB86363-F085-1
click to zoom

FDB86363-F085 Details

  • Manufacturer Part Number:

    FDB86363-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    512 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB86363-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
  • Ensure the input voltage (VIN) is within the recommended range (5.5V to 24V). Use a high-quality decoupling capacitor (e.g., 10uF ceramic) close to the device. Verify the output voltage (VOUT) is within the specified range (3.3V ± 2%).
  • The maximum allowed input voltage ripple is 200mV peak-to-peak. Exceeding this may affect device performance and reliability.
  • The output voltage tolerance is ±2%. Calculate the tolerance by multiplying the nominal output voltage (3.3V) by the tolerance percentage (±2%).
  • A high-quality, low-ESR ceramic capacitor (e.g., X5R or X7R) with a value of 10uF to 22uF is recommended. Ensure the capacitor is rated for the input voltage range (5.5V to 24V).

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDB86363-F085 Overview

Use the download button to access the FDB86363-F085 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like FDB86, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDB86363-F085

Showing 0 results

FDB86363-F085 Alternates

Showing results

Image Part Number Model
Part Image FDB86363_F085 onsemi

80V, 110A, 2.0mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL