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FDB9406-F085 - onsemi

Description: Typ rDS(on) = 1.31mΩ at VGS = 10V, ID = 80A; Qualified to AEC Q101; UIS Capability; Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A; RoHS Compliant

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FDB9406-F085 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD)
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3D Models
FDB9406-F085 - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD)
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FDB9406-F085 Details

  • Manufacturer Part Number:

    FDB9406-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Package Description:

    TO-263, D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    174 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    176 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB9406-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a proper bias voltage (VBIAS) to operate correctly. Ensure VIN is within the recommended range (4.5V to 18V) and VBIAS is set to 1.25V ± 5%.
  • The maximum power dissipation for the FDB9406-F085 is 2.5W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended range (–40°C to 150°C) to prevent overheating.
  • Handle the device by the body or use an ESD wrist strap to prevent static buildup. Use ESD-protected workstations and follow proper ESD handling procedures to prevent damage.
  • The FDB9406-F085 is designed to operate at frequencies up to 100 kHz. However, the optimal frequency range depends on the specific application and should be determined through experimentation and testing.

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FDB9406-F085 Overview

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Part Image FDB9406L-F085 onsemi

Power Field-Effect Transistor, 110A I(D), 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB