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FDBL0110N60 - onsemi

Description: Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A ; RoHS Compliant ; Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A ; UIS Capability

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FDBL0110N60 - onsemi PCB footprint - Other - Other - MO-299
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FDBL0110N60 Details

  • Manufacturer Part Number:

    FDBL0110N60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-LL 8L

  • Manufacturer Package Code:

    100CU

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    1167 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.0011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PSSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDBL0110N60 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FDBL0110N60 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the device using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the FDBL0110N60 is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase the risk of gate oxide breakdown. A lower gate drive voltage can reduce the risk of gate oxide breakdown, but may increase switching losses.
  • To protect the FDBL0110N60 from overvoltage, use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage across the device. For overcurrent protection, use a current sense resistor and a comparator to detect overcurrent conditions, and then shut down the device or reduce the current using a current limiter.
  • For optimal performance and to minimize electromagnetic interference (EMI), use a 4-layer PCB with a solid ground plane and a separate power plane. Keep the high-frequency loops small and use a Kelvin connection for the gate drive. Use a decoupling capacitor with a low equivalent series resistance (ESR) to filter the power supply.

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FDBL0110N60 Overview

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