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FDBL0240N100 - onsemi

Description: Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A; Typical Qg(tot) = 111 nC at VGS = 10V, ID = 80 A; UIS Capability; RoHS Compliant

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FDBL0240N100 - onsemi PCB footprint - Other - Other - H−PSOF8L 11.68x9.80 CASE 100CU ISSUE O
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FDBL0240N100 - onsemi  - 3D model - Other - H−PSOF8L 11.68x9.80 CASE 100CU ISSUE O
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FDBL0240N100 Details

  • Manufacturer Part Number:

    FDBL0240N100

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-LL 8L

  • Manufacturer Package Code:

    100CU

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    821 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    210 A

  • Drain-source On Resistance-Max:

    0.0028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    65 pF

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PSSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    910 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    100 ns

  • Turn-on Time-Max (ton):

    93 ns

FDBL0240N100 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND9093/D.
  • The FDBL0240N100 requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. A resistor divider network can be used to set the bias voltage, and a current-limiting resistor can be added to prevent overcurrent. Consult the onsemi application note AND9093/D for a detailed biasing circuit example.
  • The maximum power dissipation for the FDBL0240N100 is 2.5W. However, the actual power dissipation will depend on the specific application and operating conditions. It's essential to perform thermal calculations and ensure the device is properly heat-sinked to prevent overheating.
  • Yes, the FDBL0240N100 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching characteristics, such as rise and fall times, should be carefully evaluated to ensure they meet the specific application requirements.
  • The FDBL0240N100 is sensitive to ESD damage. To prevent ESD damage, handle the device with an ESD wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD-protection diodes or resistors.

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