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FDBL86062_F085 - onsemi

Description: N-Channel 100 V 300A (Tc) 429W (Tc) Surface Mount 8-HPSOF

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FDBL86062_F085 - onsemi PCB footprint - Other - Other - FDBL86062_F085-1
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FDBL86062_F085 - onsemi  - 3D model - Other - FDBL86062_F085-1
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FDBL86062_F085 Details

  • Manufacturer Part Number:

    FDBL86062_F085

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SMALL OUTLINE, R-PSSO-F2

  • Manufacturer Package Code:

    PSOF08A

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China, Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    352 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.002 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29 pF

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PSSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    429 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    59 ns

  • Turn-on Time-Max (ton):

    73 ns

FDBL86062_F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.
  • Monitor the device's temperature, current, and voltage. Implement over-temperature protection (OTP), over-current protection (OCP), and under-voltage protection (UVP) to prevent damage.
  • Yes, the FDBL86062-F085 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure you follow the recommended design and testing guidelines.
  • Consult the application note and reference design provided by onsemi. Optimize the PCB layout, component selection, and thermal management to achieve the desired performance.

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FDBL86062_F085 Overview

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Part Image FDBL86062-F085 onsemi

Power Field-Effect Transistor, 300A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-299A