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FDD10AN06A0-F085 - onsemi

Description: Obsolete - Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 7.6 A, 360 mΩ, DPAK

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FDD10AN06A0-F085 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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FDD10AN06A0-F085 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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FDD10AN06A0-F085 Details

  • Manufacturer Part Number:

    FDD10AN06A0-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252 3L (DPAK)

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    429 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    110 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    97 ns

  • Turn-on Time-Max (ton):

    131 ns

FDD10AN06A0-F085 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet, and use a stable voltage source with minimal ripple. Also, ensure that the gate-source voltage is within the recommended range.
  • To prevent ESD damage, handle the device in an ESD-protected environment, use ESD-protected tools and equipment, and ensure that your body and clothing are grounded. Avoid touching the device's pins or leads, and use anti-static packaging and storage materials.
  • Yes, the FDD10AN06A0-F085 is qualified for use in high-reliability applications, including automotive and aerospace systems. However, it's essential to follow the recommended design and testing guidelines, and to consult with onsemi's application engineers for specific guidance.
  • To determine the device's power dissipation, calculate the total power loss using the device's voltage and current ratings, and the switching frequency. The thermal resistance can be calculated using the device's thermal impedance and the PCB's thermal conductivity.

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FDD10AN06A0-F085 Overview

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Part Image FDD10AN06A0_F085 onsemi

60V, 50A, 9.4mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL