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FDD120AN15A0 - onsemi

Description: Low Miller Charge; UIS Capability (Single Pulse and Repetitive Pulse); RDS(on) = 101mΩ (Typ.) @ VGS = 10V, ID = 4A; QG(tot) = 11.2nC (Typ.) @ VGS = 10V; Low Qrr Body Diode

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FDD120AN15A0 - onsemi PCB footprint - Other - Other - FDD120AN15A0-3
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FDD120AN15A0 - onsemi  - 3D model - Other - FDD120AN15A0-3
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FDD120AN15A0 Details

  • Manufacturer Part Number:

    FDD120AN15A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    122 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD120AN15A0 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FDD120AN15A0 is 150°C. Exceeding this temperature can lead to device failure.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good airflow around the device. The heat sink should be attached to the device using a thermal interface material with a thermal conductivity of 1 W/m-K or higher.
  • The recommended gate drive voltage for the FDD120AN15A0 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
  • Yes, the FDD120AN15A0 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching performance and power losses should be carefully evaluated to ensure reliable operation.
  • To protect the FDD120AN15A0 from overvoltage and overcurrent, use a voltage clamp or a surge protector to limit the voltage across the device, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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FDD120AN15A0 Overview

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Part Image FDD120AN15A0_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA