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FDD14AN06LA0-F085 - onsemi

Description: RoHS Compliant; rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A; Low Miller Charge; Low QRR Body Diode; UIS Capability (Single Pulse and Repetitive Pulse); Qg(tot) = 25nC (Typ.), VGS = 5V; Qualified to AEC Q101

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FDD14AN06LA0-F085 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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FDD14AN06LA0-F085 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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FDD14AN06LA0-F085 Details

  • Manufacturer Part Number:

    FDD14AN06LA0-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252 3L (DPAK)

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    9.5 A

  • Drain-source On Resistance-Max:

    0.0116 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    115 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    111 ns

  • Turn-on Time-Max (ton):

    218 ns

FDD14AN06LA0-F085 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet, and use a stable voltage source with minimal ripple. Also, ensure that the gate-source voltage is within the recommended range.
  • To prevent damage, handle the device by the body and not the leads, use an anti-static wrist strap or mat, and avoid touching the leads or pins. Also, avoid exposing the device to extreme temperatures, humidity, or mechanical stress.
  • The correct gate resistor value depends on the specific application and the required switching frequency. A general rule of thumb is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the datasheet and application notes for more specific guidance.
  • Operating the device beyond the recommended temperature range can lead to reduced performance, decreased lifespan, and increased risk of failure. It's essential to ensure that the device operates within the recommended temperature range to maintain its reliability and performance.

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FDD14AN06LA0-F085 Overview

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Part Image FDD14AN06LA0_F085 onsemi

60V, 50A, 10.2mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL