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FDD16AN08A0 - onsemi

Description: Low Qrr Body Diode; QG(tot) = 31nC (Typ.) @ VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse); Qualified to AEC Q101; Low Miller Charge; RDS(on) = 13mΩ (Typ.) @ VGS = 10V, ID = 50A

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FDD16AN08A0 - onsemi - PCB symbol
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FDD16AN08A0 - onsemi PCB footprint - Other - Other - FDD16AN08A0-3
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FDD16AN08A0 Details

  • Manufacturer Part Number:

    FDD16AN08A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    95 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD16AN08A0 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FDD16AN08A0 is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. This includes setting the gate-source voltage (Vgs) between 2V and 5V, and the drain-source voltage (Vds) between 10V and 30V. Additionally, ensure the device is operated within the recommended current limits.
  • For optimal thermal performance, use a PCB with a thermal pad and a heat sink. Ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet to minimize thermal resistance and ensure proper heat dissipation.
  • To protect the FDD16AN08A0 from ESD, follow proper handling and storage procedures. Use an anti-static wrist strap or mat when handling the device, and store it in an anti-static bag or container. Ensure that the device is properly grounded during assembly and testing.
  • The FDD16AN08A0 meets the quality and reliability standards outlined in the onsemi quality manual, which includes compliance with industry standards such as AEC-Q101 and IATF 16949.

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FDD16AN08A0 Overview

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FDD16AN08A0 Alternates

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Part Image FDD16AN08A0 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image FDD16AN08A0_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA