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FDD3510H - onsemi

Description: Obsolete - N-Channel UltraFET Trench MOSFET, 100V, 44A, 28mΩ

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PCB Footprints
FDD3510H - onsemi PCB footprint - Other - Other - DPAK5 CASE 369AL ISSUE O
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3D Models
FDD3510H - onsemi  - 3D model - Other - DPAK5 CASE 369AL ISSUE O
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FDD3510H Details

  • Manufacturer Part Number:

    FDD3510H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-5

  • Package Description:

    DPAK-5

  • Manufacturer Package Code:

    369AL

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    37 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    41 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    39 ns

  • Turn-on Time-Max (ton):

    23 ns

FDD3510H Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For the FDD3510H, the SOA is limited by the maximum voltage (Vds) of 100V, maximum current (Id) of 30A, and maximum power (Pd) of 150W.
  • Use proper ESD handling procedures, such as grounding straps and ESD-safe workstations. Also, ensure that the device is stored in an ESD-safe package and handled with ESD-safe tools.
  • A gate drive circuit with a high current capability (e.g., 1A) and a fast rise time (e.g., 10ns) is recommended. A gate resistor (Rg) value of 10-20 ohms is typical.

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