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FDD3706 - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, UniFETTM II, 500 V, 3 A, 2.5 Ω, DPAK

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FDD3706 - onsemi PCB footprint - Other - Other - FDD3706-1
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FDD3706 - onsemi  - 3D model - Other - FDD3706-1
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FDD3706 Details

  • Manufacturer Part Number:

    FDD3706

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    14.7 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    44 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD3706 Frequently Asked Questions (FAQs)

  • The FDD3706 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance.
  • To ensure proper biasing, connect VCC to a stable 5V power supply, and connect VEE to a stable -5V power supply. Also, ensure that the input voltage on the VIN pin is within the recommended range of 2.5V to 5.5V.
  • To minimize noise and EMI, use a multi-layer PCB with a solid ground plane, and keep the FDD3706 away from high-frequency signals. Use short, direct traces for power and ground connections, and avoid routing signals under the device.
  • To manage thermal performance, ensure good airflow around the device, and consider using a heat sink or thermal pad. Also, follow the recommended PCB layout guidelines to minimize thermal resistance.
  • To protect the FDD3706 from ESD, use ESD-sensitive handling procedures during assembly and storage. Also, consider adding external ESD protection devices, such as TVS diodes or ESD arrays, to the PCB design.

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FDD3706 Overview

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Part Image FDD3706 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14.7A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252