Part Image

FDD3N40TM - onsemi

Description: Low gate charge ( Typ. 4.5nC); 100% avalanche tested; RDS(on) = 3.4Ω ( Max.)@ VGS = 10V, ID = 1A; Low Crss ( Typ. 3.7pF)

Download FDD3N40TM Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDD3N40TM - onsemi PCB footprint - Other - Other - FDD3N40TM-2
click to zoom

FDD3N40TM Details

  • Manufacturer Part Number:

    FDD3N40TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.3

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    46 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    3.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD3N40TM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDD3N40TM is -55°C to 150°C.
  • To ensure proper biasing, the FDD3N40TM requires a gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) between 10V and 40V.
  • The recommended gate resistor value for the FDD3N40TM is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • Yes, the FDD3N40TM is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the FDD3N40TM, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDD3N40TM Overview

Use the download button to access the FDD3N40TM schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like FDD3N, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDD3N40TM

Showing 0 results

FDD3N40TM Alternates

Showing results

Image Part Number Model
Part Image NDD03N40ZT4G onsemi

Power Field-Effect Transistor, 2.1A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET