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FDD4685 - onsemi

Description: RoHS Compliant ; Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A ; High performance trench technology for extremely low rDS(on) ; Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A

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PCB Footprints
FDD4685 - onsemi PCB footprint - Other - Other - FDD4685-4
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FDD4685 - onsemi  - 3D model - Other - FDD4685-4
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FDD4685 Details

  • Manufacturer Part Number:

    FDD4685

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK, TO-252, 2 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    121 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    8.4 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    205 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    81 ns

  • Turn-on Time-Max (ton):

    43 ns

FDD4685 Frequently Asked Questions (FAQs)

  • The FDD4685 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDD4685 requires a bias voltage of 12V to 15V on the VCC pin, and a bias current of 10mA to 20mA on the VBIAS pin. Ensure proper biasing for optimal performance and to prevent damage to the device.
  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure good thermal conductivity and heat dissipation to prevent overheating. A thermal pad on the bottom of the package can help with heat dissipation.
  • Use proper PCB layout techniques, such as separating analog and digital grounds, and using shielding and filtering to minimize EMI. Additionally, consider using a common-mode choke or ferrite bead to reduce high-frequency noise.
  • Critical timing parameters include the input rise and fall times, output delay, and pulse width. Ensure proper timing by using a clock signal with a stable frequency and amplitude, and by using a signal conditioner or buffer if necessary.

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FDD4685 Overview

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Image Part Number Model
Part Image FDD4685 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8.4A I(D), 40V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image FDD4685_F085 onsemi

-40V, -8.4A, 27mΩ, DPAK P-Channel PowerTrench®, TO-252 3L (DPAK), 30000-TAPE REEL