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FDD6030L - onsemi

Description: Obsolete - Fast Switching N-Channel PowerTrench MOSFET, 30V, 50A, 8.8mΩ

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PCB Footprints
FDD6030L - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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3D Models
FDD6030L - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FDD6030L Details

  • Manufacturer Part Number:

    FDD6030L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    67 ns

  • Turn-on Time-Max (ton):

    32 ns

FDD6030L Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDD6030L is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically around 10-15V.
  • To minimize thermal resistance, use a thermal pad on the PCB, and ensure good thermal conductivity between the device and the heat sink. A recommended layout is to have a solid copper pour on the PCB, with multiple vias connecting the thermal pad to the heat sink.
  • To protect the FDD6030L from ESD, use an ESD protection device, such as a TVS diode, in parallel with the device. Additionally, ensure that the PCB is designed with ESD protection in mind, and handle the device with ESD-safe materials and tools.
  • The recommended gate drive voltage for the FDD6030L is typically around 10-15V, with a maximum gate-source voltage of 20V.

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FDD6030L Overview

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Part Image FDD6030L Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 50A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252