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FDD6296 - onsemi

Description: Obsolete - 20V N-Channel PowerTrench MOSFET 21A, 32mΩ

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PCB Footprints
FDD6296 - onsemi PCB footprint - Other - Other - FDD6296-2
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FDD6296 - onsemi  - 3D model - Other - FDD6296-2
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FDD6296 Details

  • Manufacturer Part Number:

    FDD6296

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    165 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD6296 Frequently Asked Questions (FAQs)

  • The FDD6296 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance.
  • To ensure proper biasing, connect the VCC pin to a stable 12V power supply, and the VEE pin to a stable -5V power supply. Also, make sure to decouple the power supplies with 10uF capacitors to minimize noise.
  • To minimize EMI and thermal issues, use a multi-layer PCB with a solid ground plane, keep the FDD6296 away from high-frequency components, and use thermal vias to dissipate heat. Also, use a heat sink with a thermal resistance of 1°C/W or lower.
  • Use a voltage regulator to regulate the input voltage to the FDD6296, and add overcurrent protection devices such as fuses or PTC thermistors to prevent damage from excessive current.
  • Use a push-pull output stage with a current-limiting resistor and a freewheeling diode to prevent back-EMF damage. Also, use a snubber circuit to reduce electromagnetic interference.

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FDD6296 Overview

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Part Image FDD6296 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 15A I(D), 30V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FDD6296_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 15A I(D), 30V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252