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FDD7N20TM - onsemi

Description: Low Crss (Typ. 5pF); 100% avalanche tested; RDS(on) = 580mΩ (Typ.)@ VGS = 10V, ID = 2.5A; Low gate charge (Typ. 5nC); RoHS compliant

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PCB Footprints
FDD7N20TM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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3D Models
FDD7N20TM - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FDD7N20TM Details

  • Manufacturer Part Number:

    FDD7N20TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AB, DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    62.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.69 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    66 ns

  • Turn-on Time-Max (ton):

    98 ns

FDD7N20TM Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FDD7N20TM is typically defined by the device's voltage and current ratings. For the FDD7N20TM, the maximum voltage rating is 200V and the maximum current rating is 7A. Operating the device within these ratings ensures safe and reliable operation.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material (TIM) between the device and the heat sink, and ensure the heat sink is properly attached to the device. Additionally, follow the recommended PCB layout and thermal design guidelines provided in the datasheet.
  • The recommended gate drive voltage for the FDD7N20TM is between 10V and 15V. This ensures proper switching and minimizes the risk of device damage. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions.
  • To protect the FDD7N20TM from ESD, follow proper handling and storage procedures. Use an anti-static wrist strap or mat when handling the device, and store the device in an anti-static bag or container. Additionally, ensure the PCB and assembly process follow ESD-safe practices.
  • The recommended PCB layout for the FDD7N20TM involves keeping the power traces short and wide, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. Follow the PCB layout guidelines provided in the datasheet and application notes for optimal performance and reliability.

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FDD7N20TM Overview

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