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FDD7N60NZTM - onsemi

Description: RDS(on) = 1.05Ω (Typ.)@ VGS = 10V, ID = 2.75A; Low Crss (Typ. 7pF); Low gate charge (Typ. 13nC); ESD improved capability; Improved dv/dt capability; 100% avalanche tested; RoHS compliant

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PCB Footprints
FDD7N60NZTM - onsemi PCB footprint - Other - Other - TO252 (D-PAK),Molded,3-Lead,Option AA&AB
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FDD7N60NZTM Details

  • Manufacturer Part Number:

    FDD7N60NZTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    347 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    1.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    150 ns

  • Turn-on Time-Max (ton):

    115 ns

FDD7N60NZTM Frequently Asked Questions (FAQs)

  • The recommended gate resistor value is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher value can help reduce EMI, but may slow down the switching speed.
  • Proper cooling can be achieved by providing a sufficient heat sink, ensuring good thermal contact between the device and heat sink, and using a thermal interface material (TIM) if necessary. The device's thermal resistance (RθJA) should be considered when designing the cooling system.
  • The maximum allowed voltage transient for the FDD7N60NZTM is typically 650V, but this can vary depending on the specific application and operating conditions. It's essential to ensure that the device is not exposed to voltage transients exceeding this value to prevent damage or premature failure.
  • Yes, the FDD7N60NZTM is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching losses, gate charge, and thermal performance when designing the application.
  • Overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Overvoltage protection can be implemented using a voltage supervisor or a dedicated overvoltage protection IC. It's essential to consider the device's absolute maximum ratings and recommended operating conditions when designing the protection circuitry.

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