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FDD8445 - onsemi

Description: Qg(10) = 45nC (Typ), VGS=10V ; UIS Capability (Single Pulse/ Repetitive Pulse) ; Low Qrr Body Diode ; Low Miller Charge ; RoHS Compliant ; RDS(ON) = 6.7 mΩ (Typ), VGS = 10V, ID=50A

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FDD8445 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_12
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FDD8445 Details

  • Manufacturer Part Number:

    FDD8445

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    144 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.0087 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD8445 Frequently Asked Questions (FAQs)

  • The FDD8445 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and the source to ground. The recommended gate voltage is around 4-5 V.
  • The FDD8445 has a maximum continuous drain current rating of 10 A, and a peak current rating of 20 A.
  • Use a voltage regulator to limit the voltage to the recommended maximum of 30 V. Additionally, consider adding overcurrent protection using a fuse or a current-sensing resistor.
  • Use a low-impedance PCB layout with short, wide traces to minimize inductance and resistance. Keep the drain and source pins as close as possible to reduce parasitic inductance.

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FDD8445 Overview

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Part Image FDD8445 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 70A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA