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FDD8447L - onsemi

Description: RoHS compliant; Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A; Fast Switching ; Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A

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FDD8447L - onsemi PCB footprint - Other - Other - FDD8447L-1
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FDD8447L - onsemi  - 3D model - Other - FDD8447L-1
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FDD8447L Details

  • Manufacturer Part Number:

    FDD8447L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    153 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.0085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD8447L Frequently Asked Questions (FAQs)

  • The FDD8447L can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and connect the source to ground through a resistor (e.g., 10 kΩ).
  • Use a thermal pad on the PCB, and ensure the drain pin is connected to a large copper area to dissipate heat efficiently.
  • Yes, the FDD8447L is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
  • Use a voltage regulator or a zener diode to limit the voltage, and consider adding a current-sensing resistor and a fuse to protect against overcurrent conditions.

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FDD8447L Overview

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