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FDD86326 - onsemi

Description: N-Channel Shielded Gate PowerTrench ® MOSFET 80 V, 37 A, 23 mΩ D-PAK(TO-252)

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PCB Footprints
FDD86326 - onsemi PCB footprint - Other - Other -  D-PAK(TO-252)
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FDD86326 - onsemi  - 3D model - Other -  D-PAK(TO-252)
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FDD86326 Details

  • Manufacturer Part Number:

    FDD86326

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    121 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD86326 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDD86326 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDD86326 for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, minimize the voltage on the VIN pin and use a low-quiescent-current regulator for the VCC pin. Furthermore, consider using a low-power mode or shutdown mode if available.
  • The FDD86326 has a thermal junction-to-ambient thermal resistance of 30°C/W. To prevent overheating, ensure good airflow around the device, use a heat sink if necessary, and avoid blocking the thermal pads on the package. Also, keep the device away from other heat sources and ensure that the PCB is designed to dissipate heat efficiently.
  • To troubleshoot issues with the FDD86326, start by checking the input voltage, output voltage, and current levels. Verify that the device is properly configured and that the PCB layout is correct. Use an oscilloscope to check for voltage ringing or oscillations, and ensure that the device is not overheating. Consult the datasheet and application notes for guidance on troubleshooting specific issues.
  • Yes, the FDD86326 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive reliability and is designed to operate in harsh environments. However, ensure that the device is properly derated for the specific application, and follow the recommended PCB layout and thermal design guidelines.

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FDD86326 Overview

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