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FDD86367-F085 - onsemi

Description: AEC−Q101 Qualified and PPAP Capable; RoHS Compliant; Low RDS(on); Low QG(tot) and Capacitance

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FDD86367-F085 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FDD86367-F085 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FDD86367-F085 Details

  • Manufacturer Part Number:

    FDD86367-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252 3L (DPAK)

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    82 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    31 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    227 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    80 ns

  • Turn-on Time-Max (ton):

    104 ns

FDD86367-F085 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDD86367-F085 is -40°C to 150°C.
  • To ensure stability, it's essential to follow the recommended layout and component selection guidelines, including the use of a suitable output capacitor and a stable input voltage.
  • The recommended input capacitor value is 10uF to 22uF, with an ESR (Equivalent Series Resistance) of less than 1 ohm.
  • Yes, the FDD86367-F085 is suitable for high-reliability applications, such as automotive and industrial systems, due to its robust design and high-quality manufacturing process.
  • Power dissipation can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.

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FDD86367-F085 Overview

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Power Field-Effect Transistor, 100A I(D), 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252AA

Part Image FDD86367_F085 onsemi

80V, 100A, 3.3 mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL