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FDD86567-F085 - onsemi

Description: Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A ; RoHS Compliant ; Qualified to AEC Q101 ; Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A ; UIS Capability

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PCB Footprints
FDD86567-F085 - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUEF_FFW
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FDD86567-F085 - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUEF_FFW
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FDD86567-F085 Details

  • Manufacturer Part Number:

    FDD86567-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252 3L (DPAK)

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    115 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    227 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    59 ns

  • Turn-on Time-Max (ton):

    105 ns

FDD86567-F085 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the PMIC away from high-current paths and ensure good airflow around the device.
  • Use a soft-start circuit to limit inrush current during startup. For shutdown, ensure a controlled shutdown sequence to prevent voltage spikes and ensure all internal regulators are disabled before power-off.
  • Use a pi-filter (L-C-L) or a common-mode choke to filter out high-frequency noise. Place the filter components close to the PMIC and ensure good grounding to minimize radiation.
  • Use the PMIC's built-in power-saving features, such as dynamic voltage scaling and clock gating. Optimize the system's power domains to minimize power consumption in low-power modes.
  • Use a thermal interface material (TIM) to improve heat transfer between the PMIC and heat sink. Ensure good airflow and consider using a heat sink with a thermal conductivity of at least 1 W/m-K.

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FDD86567-F085 Overview

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Part Image FDD86567_F085 onsemi

60V, 100A, 2.6mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL