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FDFMA2P029Z - onsemi

Description: Last Shipments - Integrated P-Channel PowerTrench MOSFET and Schottky Diode, -20V, 3.1A, 95mΩ

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PCB Footprints
FDFMA2P029Z - onsemi PCB footprint - Other - Other - WDFN6 2x2, 0.65P CASE 511DA ISSUE O_1
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3D Models
FDFMA2P029Z - onsemi  - 3D model - Other - WDFN6 2x2, 0.65P CASE 511DA ISSUE O_1
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FDFMA2P029Z Details

  • Manufacturer Part Number:

    FDFMA2P029Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFN-6

  • Package Description:

    MICROFET-6

  • Manufacturer Package Code:

    511DA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.1 A

  • Drain-source On Resistance-Max:

    0.95 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JEDEC-95 Code:

    MO-229VCCC

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDFMA2P029Z Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or heat sink, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components to allow for airflow.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating temperature range, use a heat sink or thermal pad, and consider using a thermal interface material to improve heat transfer.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's essential to ensure the device operates within the recommended temperature range.
  • Yes, the FDFMA2P029Z is suitable for high-reliability and automotive applications, as it meets the relevant industry standards and has been qualified for use in these environments. However, it's essential to follow the recommended design and testing guidelines to ensure the device meets the specific application requirements.
  • To handle ESD protection for the FDFMA2P029Z, follow proper handling and storage procedures, use ESD-protective packaging and materials, and consider implementing ESD protection circuits or devices in the design.

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FDFMA2P029Z Overview

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Part Image FDFMA2P029Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC