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FDFMA2P853 - onsemi

Description: Obsolete - Integrated N-Channel PowerTrenchMOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ

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PCB Footprints
FDFMA2P853 - onsemi PCB footprint - Other - Other - WDFN6 2x2, 0.65P CASE 511DA ISSUE O_1
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3D Models
FDFMA2P853 - onsemi  - 3D model - Other - WDFN6 2x2, 0.65P CASE 511DA ISSUE O_1
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FDFMA2P853 Details

  • Manufacturer Part Number:

    FDFMA2P853

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFN-6

  • Package Description:

    2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6

  • Manufacturer Package Code:

    511DA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-229VCCC

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDFMA2P853 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Use X7R or X5R ceramic capacitors with a voltage rating of 10V or higher. For input capacitors, use 10uF to 22uF values, and for output capacitors, use 10uF to 47uF values.
  • Use a shielded enclosure, keep the device and its associated components away from the PCB edge, and use a common-mode choke or ferrite bead on the input lines. Ensure proper grounding and decoupling of the device.
  • Apply the input voltage (VIN) first, followed by the enable signal (EN). Ensure the input voltage is stable before applying the enable signal.

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FDFMA2P853 Overview

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Image Part Number Model
Part Image FDFMA2P853 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.2A I(D), 20V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC