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FDFS6N548 - onsemi

Description: Obsolete - Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V , 4A, 56mΩ

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FDFS6N548 Details

  • Manufacturer Part Number:

    FDFS6N548

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    12 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDFS6N548 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDFS6N548 is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended bias voltage is 15V to 20V.
  • To minimize parasitic inductance, use a compact PCB layout with short leads and a solid ground plane. Place the FDFS6N548 close to the input and output capacitors, and use a Kelvin connection for the source pin.
  • Use a voltage clamp or a zener diode to protect the FDFS6N548 from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current.
  • A recommended gate drive circuit for the FDFS6N548 includes a gate driver IC, such as the FAN5350, with a bootstrap capacitor and a pull-down resistor.

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FDFS6N548 Overview

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Part Image FDFS6N548 Rochester Electronics LLC

7A, 30V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8

Part Image FDFS6N548 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET