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FDH047AN08A0 - onsemi

Description: Low Miller Charge; Low Qrr Body Diode; RDS(on) = 4.0mΩ (Typ.) @ VGS = 10V, ID = 80A; QG(tot) = 92nC (Typ.) @ VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse)

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PCB Footprints
FDH047AN08A0 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE  A
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3D Models
FDH047AN08A0 - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE  A
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FDH047AN08A0 Details

  • Manufacturer Part Number:

    FDH047AN08A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Package Description:

    TO-247, 3 PIN

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    475 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDH047AN08A0 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to improve heat dissipation.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement proper thermal management, such as heat sinks or thermal interfaces, to maintain a safe operating temperature.
  • Handle the device with ESD-protective equipment and follow standard ESD handling procedures. The device has built-in ESD protection, but it is not a substitute for proper handling and storage procedures.
  • Yes, the FDH047AN08A0 is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards or customer requirements.
  • Use a combination of visual inspection, voltage and current measurements, and oscilloscope analysis to identify and isolate issues. Consult the datasheet and application notes for specific troubleshooting guidelines.

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FDH047AN08A0 Overview

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