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FDH44N50 - onsemi

Description: Reduced RDS(on) ( 110mΩ ( Typ.)@ VGS = 10V, ID = 22A); Improved switching speed with low EMI; 175oC rated junction temperature; Low gate charge Qg results in simple drive requirement ( Typ. 90nC); Improved Gate, avalanche and high reapplied dv/dt ruggedness; Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 40pF)

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PCB Footprints
FDH44N50 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247
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3D Models
FDH44N50 - onsemi  - 3D model - Transistor Outline, Vertical - TO-247
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FDH44N50 Details

  • Manufacturer Part Number:

    FDH44N50

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Package Description:

    TO-247, 3 PIN

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    750 W

  • Pulsed Drain Current-Max (IDM):

    176 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDH44N50 Frequently Asked Questions (FAQs)

  • The FDH44N50 is a power MOSFET, and as such, it does not have a specific maximum operating frequency. However, it is suitable for high-frequency switching applications up to several hundred kHz.
  • To ensure proper thermal management, it is essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material, and ensure the heat sink is properly attached to the device. Also, follow the recommended PCB layout and thermal design guidelines.
  • The recommended gate drive voltage for the FDH44N50 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To protect the FDH44N50 from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Also, ensure the device is operated within its recommended operating conditions and follow proper PCB design and layout guidelines.
  • The maximum allowed drain-source voltage for the FDH44N50 is 500V. Exceeding this voltage may damage the device.

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FDH44N50 Overview

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