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FDH45N50F_F133 - onsemi

Description: FDH45N50F_F133 N-Channel MOSFET, 45 A, 500 V UniFET, 3-Pin TO-247 ON Semiconductor

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FDH45N50F_F133 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3LD CASE 340CH ISSUE A
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FDH45N50F_F133 - onsemi  - 3D model - Transistor Outline, Vertical - TO-247-3LD CASE 340CH ISSUE A
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FDH45N50F_F133 Details

  • Manufacturer Part Number:

    FDH45N50F_F133

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    FLANGE MOUNT, R-PSFM-T3

  • Manufacturer Package Code:

    TO247A03

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    1868 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    625 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDH45N50F_F133 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDH45N50F-F133 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The recommended gate drive voltage for the FDH45N50F-F133 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using shielding, and implementing filtering and decoupling capacitors.
  • The maximum allowable current for the FDH45N50F-F133 is 45A, with a maximum pulsed current of 135A.

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FDH45N50F_F133 Overview

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