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FDL100N50F - onsemi

Description: 100% avalanche tested; RoHS compliant; Low gate charge ( Typ. 238nC); Improved dv/dt capability; RDS(on) = 43mΩ ( Typ.)@ VGS = 10V, ID = 50A; Low Crss ( Typ. 64pF)

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PCB Footprints
FDL100N50F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - BFC236825104
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3D Models
FDL100N50F - onsemi  - 3D model - Transistor Outline, Vertical - BFC236825104
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FDL100N50F Details

  • Manufacturer Part Number:

    FDL100N50F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-264-3

  • Package Description:

    TO-264, 3 PIN

  • Manufacturer Package Code:

    340CA

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.18

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2500 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDL100N50F Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDL100N50F is -55°C to 150°C.
  • To ensure proper biasing, the FDL100N50F requires a gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) between 10V and 50V.
  • The recommended gate resistor value for the FDL100N50F is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • Yes, the FDL100N50F is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the FDL100N50F from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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FDL100N50F Overview

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