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FDMC008N08C - onsemi

Description: MSL1 robust package design; 50% lower Qrr than other MOSFET suppliers; Shielded Gate MOSFET Technology; 100% UIL tested; Max rDS(on) = 19.3 m at VGS = 6 V, ID = 10 A; RoHS Compliant; Max rDS(on) = 7.8 m at VGS = 10 V, ID = 21 A; Lowers switching noise/EMI

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PCB Footprints
FDMC008N08C - onsemi PCB footprint - Other - Other - WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A_1
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3D Models
FDMC008N08C - onsemi  - 3D model - Other - WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A_1
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FDMC008N08C Details

  • Manufacturer Part Number:

    FDMC008N08C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AW

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-02-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    MO-240BA

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    273 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    42 ns

  • Turn-on Time-Max (ton):

    32 ns

FDMC008N08C Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDMC008N08C is -55°C to 150°C.
  • To ensure proper biasing, the FDMC008N08C requires a Vcc of 5V ± 10% and a Vee of -5V ± 10%. Additionally, the device should be operated within the recommended operating conditions outlined in the datasheet.
  • For optimal thermal performance, it is recommended to use a multi-layer PCB with a solid ground plane and to place thermal vias under the device. A heat sink may also be necessary depending on the application and power dissipation requirements.
  • To prevent ESD damage, it is recommended to use ESD-protective equipment and follow proper handling procedures when working with the FDMC008N08C. Additionally, the device should be stored in an anti-static bag or container when not in use.
  • The FDMC008N08C is built to meet the reliability and quality standards outlined in the onsemi quality manual, which includes compliance with industry standards such as AEC-Q101 and ISO/TS 16949.

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FDMC008N08C Overview

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