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FDMC15N06 - onsemi

Description: RDS(on) = 75 mΩ (Typ.)@ VGS = 10 V, ID = 15 A; 100% Avalanche Tested ; RoHS compliant

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FDMC15N06 - onsemi - PCB symbol
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PCB Footprints
FDMC15N06 - onsemi PCB footprint - Other - Other - FDMC15N06-1
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FDMC15N06 - onsemi - 3D model - Other - FDMC15N06-1
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FDMC15N06 Details

  • Manufacturer Part Number:

    FDMC15N06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFN-8

  • Manufacturer Package Code:

    511DQ

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    2.4 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMC15N06 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FDMC15N06 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
  • To calculate the power dissipation of the FDMC15N06, you need to know the drain-source voltage (Vds), drain current (Id), and the Rds(on) of the device. The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Id x Rds(on).
  • The recommended gate drive voltage for the FDMC15N06 is between 4.5V and 10V. A higher gate drive voltage can reduce the Rds(on) and improve the switching performance, but it may also increase the power consumption and EMI.
  • Yes, the FDMC15N06 is suitable for high-frequency switching applications up to 100 kHz. However, you need to ensure that the device is properly cooled and the switching losses are minimized to prevent overheating and reduce the efficiency.
  • To protect the FDMC15N06 from overvoltage and overcurrent, you can use a voltage clamp or a TVS diode to limit the voltage across the device. You can also use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.

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FDMC15N06 Overview

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