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FDMC4435BZ - onsemi

Description: 100% UIL Tested ; Termination is Lead-free and RoHS Compliant ; Max rDS(on) = 37.0mΩ at VGS = -4.5V, ID = -6.3A ; HBM ESD protection level >7kV typical ; High power and current handling capability ; Max rDS(on) = 20.0mΩ at VGS = -10V, ID = -8.5A ; High performance trench technology for extremely low rDS(on) ; Extended VGSS range (-25V) for battery applications

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PCB Footprints
FDMC4435BZ - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
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3D Models
FDMC4435BZ - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
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FDMC4435BZ Details

  • Manufacturer Part Number:

    FDMC4435BZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8

  • Manufacturer Package Code:

    511DR

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.5 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMC4435BZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer.
  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.
  • Yes, the FDMC4435BZ is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout and decoupling to minimize electromagnetic interference (EMI).
  • Use proper ESD handling procedures, such as wearing an ESD strap, using an ESD mat, and storing the device in an ESD-protective package. Also, ensure that the PCB design includes ESD protection components, such as TVS diodes.

Trust Checks

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Manufacturer Collaborated
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FDMC4435BZ Overview

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