Part Image

FDMC5614P - onsemi

Description: Max rDS(on) = 100 mΩ @ VGS = -10 V,ID = -5.7A ; Fast switching speed ; Low gate charge ; High performance trench technology for extremely low rDS(on) ; High power and current handling capability ; RoHS Compliant ; Max rDS(on) = 135 mΩ @ VGS = -4.5 V,ID = -4.4A

Download FDMC5614P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDMC5614P - onsemi PCB footprint - Other - Other - FDMC5614P-2
click to zoom
3D Models
FDMC5614P - onsemi  - 3D model - Other - FDMC5614P-2
click to zoom

FDMC5614P Details

  • Manufacturer Part Number:

    FDMC5614P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFN-8

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511DR

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    13.5 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    23 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    87 ns

  • Turn-on Time-Max (ton):

    44 ns

FDMC5614P Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer.
  • The maximum allowable voltage on the input pins is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.
  • Yes, the FDMC5614P is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout and decoupling to minimize electromagnetic interference (EMI).
  • Use proper ESD handling procedures, such as wearing an ESD strap, using an ESD mat, and storing the device in an ESD-protective package. Also, consider adding ESD protection circuits in the design.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDMC5614P Overview

Use the download button to access the FDMC5614P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDMC5, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDMC5614P

Showing 0 results