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FDMC7678 - onsemi

Description: Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A; Termination is Lead-free and RoHS Compliant; High performance technology for extremely low rDS(on); Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID= 15.0 A

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PCB Footprints
FDMC7678 - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
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3D Models
FDMC7678 - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
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FDMC7678 Details

  • Manufacturer Part Number:

    FDMC7678

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFN-8

  • Package Description:

    3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN

  • Manufacturer Package Code:

    511DR

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    54 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    17.5 A

  • Drain-source On Resistance-Max:

    0.0053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240BA

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMC7678 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer.
  • The critical timing parameters include the input rise and fall times, output delay, and propagation delay. These parameters are typically specified in the datasheet, but may require additional consideration for specific applications.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect the device from electrostatic discharge. Follow the recommended PCB layout and handling procedures to minimize ESD risks.
  • Use a high-speed oscilloscope and a signal generator to test the device's performance. Measure the output voltage, current, and frequency response to ensure compliance with the datasheet specifications.

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FDMC7678 Overview

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