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FDMC86102LZ - onsemi

Description: RoHS Compliant ; HBM ESD protection level > 6 KV typical (Note 4) ; Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A ; Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A ; 100% UIL Tested ; Shielded Gate MOSFET Technology

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PCB Footprints
FDMC86102LZ - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
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3D Models
FDMC86102LZ - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
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FDMC86102LZ Details

  • Manufacturer Part Number:

    FDMC86102LZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8

  • Package Description:

    3.30 X 3.30 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN

  • Manufacturer Package Code:

    511DH

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    84 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    41 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMC86102LZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer.
  • The maximum allowable voltage on the input pins is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.
  • Yes, the FDMC86102LZ is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout and decoupling to minimize electromagnetic interference (EMI).
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input lines to protect the device from electrostatic discharge. Follow proper PCB layout and handling procedures to minimize ESD risks.

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FDMC86102LZ Overview

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