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FDMC8622 - onsemi

Description: 100% UIL Tested; Shielded Gate MOSFET Technology; High performance trench technology for extremely low rDS(on); High power and current handling capability in a widely used surface mount package; Max rDS(on) = 100 mΩat VGS = 6 V, ID = 3 A; Max rDS(on) = 56 mΩat VGS = 10 V, ID = 4 A; Termination is Lead-free and RoHS Compliant

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PCB Footprints
FDMC8622 - onsemi PCB footprint - Other - Other - FDMC8622-3
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3D Models
FDMC8622 - onsemi  - 3D model - Other - FDMC8622-3
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FDMC8622 Details

  • Manufacturer Part Number:

    FDMC8622

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8

  • Package Description:

    ROHS COMPLIANT, MLP, 8 PIN

  • Manufacturer Package Code:

    511DR

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    37 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240BA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMC8622 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • Use a shielded enclosure, keep the device away from antennas and other EMI sources, and use EMI filters or chokes on the input and output lines. Also, ensure that the PCB layout is designed to minimize radiation and coupling.
  • Use the lowest possible voltage supply, minimize the switching frequency, and optimize the gate drive circuitry. Also, consider using a low-power mode or shutdown feature if available.
  • Monitor the device temperature, voltage, and current. Also, implement overcurrent protection, overvoltage protection, and undervoltage protection to prevent damage from abnormal operating conditions.

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FDMC8622 Overview

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